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| inchange semiconductor product specification silicon npn power transistors 2SC4706 description ? with to-3pn package ? high voltage switching transistor applications ? for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 7 v i c collector current 14 a i cm collector current-peak 28 a i b base current 7 a p c collector power dissipation t c =25 ?? 130 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4706 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 600 v i cbo collector cut-off current v cb =800v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =7a ; v ce =4v 10 25 v ce(sat) collector-emitter saturation voltage i c =7a ; i b =1.4a 0.5 v v be(sat) base-emitter saturation voltage i c =7a ; i b =1.4a 1.2 v f t transition frequency v ce =12v;i e =-1.5a 6 mhz c ob collector output capacitance v cb =10v;f=1mhz 160 pf switching times t on turn-on time 1.0 | s t s storage time 5.0 | s t f fall time i c =7a;r l =35.7 |? i b1 =1.05a;i b2 =-3.5a v cc =250v 0.7 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC4706 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC4706 |
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